1.
US6229736 (2001.5.8):
Method of erasing flash memory and substrate voltage
supply circuit |
 |
2. US58124449,GB2300969
and CN1159059 (1998.9.22):
Manufacturing method of EEPROM cells |
|
3. GB2342228
(2000.4.5):
Method of programming an EEPROM having tow floating
gates |
|
4. US5616942
and GB2299451 (1997.4.1):
Flash EEPROM cell and Manufacturing Method |
|
5. KR9304300
(1993.5.22):
Threshold verification method in a non-volatile
memory cell |
|
6. GB2337691,
CN1172328 and GB2314952 (1999.9.28):
A method of erasing a flash memory devices |
|
7. GB2300519
and CN1147155 (1996.11.6):
A methods for transistor structure |
| |
| |
